The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Jun. 12, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chia-Chung Chen, Hsinchu, TW;

Meng-Sheng Chang, Hsinchu, TW;

Chung-Sheng Yuan, Hsinchu, TW;

Yi-Kan Cheng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/49 (2026.01); G11C 17/16 (2006.01); H10B 20/25 (2023.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10W 20/493 (2026.01); G11C 17/16 (2013.01); H10B 20/25 (2023.02); H10W 20/42 (2026.01); H10W 20/435 (2026.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01);
Abstract

A semiconductor structure includes a substrate having a first surface and a second surface opposite the first surface. The semiconductor structure includes a semiconductor device disposed on the first surface. The semiconductor structure includes a metallization layer disposed on the second surface. The semiconductor structure includes a first conductive via and a second conductive via coupled in parallel to the metallization layer, the first conductive via and the second conductive via extending from the second side toward the first side. The semiconductor structure further includes an electrical fuse disposed over the semiconductor device and coupled to the first and second conductive vias.


Find Patent Forward Citations

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Chen, Chia-Chung. (2026). Semiconductor devices with electrical fuses and methods of fabricating the same (U.S. Patent No. 12787760). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787760

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