Mehran G Sedigh

Title: Innovations of Mehran G Sedigh

Introduction

Mehran G Sedigh is a prominent inventor based in Los Angeles, CA. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on improving the efficiency and effectiveness of various semiconductor processes.

Latest Patents

One of his latest patents is titled "Shallow trench isolation structures and methods for forming the same." This invention provides a shallow trench isolation (STI) structure and method that reduces defects in a nitride film used as a field oxide mask. The method involves depositing a nitride over pad oxide on a substrate using plasma enhanced chemical vapor deposition (PECVD) and patterning the PECVD nitride to form a field oxide mask. The process includes forming a patterned resist layer on the PECVD nitride, etching at least one opening through the PECVD nitride, and stripping the patterned resist layer in-situ using a fluorine-based plasma. Another notable patent involves a method of forming structures by depositing silicon nitride films simultaneously on multiple substrates at a first temperature and subsequently heating the films at a higher temperature.

Career Highlights

Mehran G Sedigh is currently employed at Cypress Semiconductor Corporation, where he continues to innovate and develop new technologies. His expertise in semiconductor processes has made him a valuable asset to the company.

Collaborations

Throughout his career, Sedigh has collaborated with notable colleagues, including Jianmin Qiao and Sam G Geha. These partnerships have contributed to the advancement of semiconductor technologies and innovations.

Conclusion

Mehran G Sedigh's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a leading inventor. His work continues to influence the industry and drive innovation forward.