The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Jul. 10, 2002
Applicants:
Jun Sung Chun, Fremont, CA (US);
Mehran Sedigh, Campbell, CA (US);
Christ Ford, San Jose, CA (US);
Inventors:
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G03F007/26 ; G03F007/40 ;
U.S. Cl.
CPC ...
Abstract
A method of forming a photoresist includes forming a photoresist and patterning/developing it according to conventional methods. The photoresist is then subjected to ion implantation. The ions may be selected from the group consisting of argon, boron, boron fluoride, arsenic, phosphorous and nitrogen. The ion implantation during processing of the photoresist provides a stabilized photoresist and helps reduce CD loss, loss of the photoresist and formation of pin holes and striations.