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Hsinchu, Taiwan

Md Imran Siddiqui

USPTO Granted Patents = 7 (Patent Applications = 1)

Average Co-Inventor Count = 2.1

ph-index = 2

Forward Citations = 13(Granted Patents)

Location History:

Dhanbad, IN (2019)
Hsinchu, TW (2013 - 2020)

Company Filing History:

Nuvoton Technology Corporation

Years Active: 2013-2020

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7 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10644101 - Level shifter and semiconductor device (2020-05-05),

2. 10573713 - High voltage junction terminating structure of high voltage integrated circuit (2020-02-25),

3. 10510834 - High-voltage semiconductor device having a doped isolation region between a level shift region and a high voltage region (2019-12-17),

4. 9269704 - Semiconductor device with embedded silicon-controlled rectifier (2016-02-23),

5. 9240444 - High-voltage semiconductor device with a termination structure (2016-01-19),

6. 8912599 - Semiconductor device and method of fabricating the same (2014-12-16),

7. 8592901 - Metal oxide semiconductor field transistor and method of fabricating the same (2013-11-26),

Title: Md Imran Siddiqui - Innovative Inventor from Hsinchu

Introduction: Md Imran Siddiqui is a talented inventor based in Hsinchu, Taiwan, known for his groundbreaking innovations in various fields.

Latest Patents: Md Imran Siddiqui holds several patents in the areas of technology and engineering, showcasing his commitment to pushing the boundaries of what is possible.

Career Highlights: With a career marked by a passion for creativity and problem-solving, Md Imran Siddiqui has consistently delivered cutting-edge solutions that have made a significant impact in the industry.

Collaborations: Throughout his career, Md Imran Siddiqui has collaborated with leading experts and organizations, fostering a culture of innovation and excellence in all his projects.

Conclusion: Md Imran Siddiqui's dedication to innovation and his remarkable contributions to the field make him a standout inventor in the vibrant city of Hsinchu, Taiwan.

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