The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Dec. 29, 2017
Nuvoton Technology Corporation, Hsinchu, TW;
Md Imran Siddiqui, Dhanbad, IN;
Po-An Chen, Toufen, TW;
Nuvoton Technology Corporation, Hsinchu Science Park, TW;
Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate structure including a high side region, a low side region, a level shift region and an isolation region. The low side region is separated from the high side region. The level shift region and the isolation region are disposed between the low side region and the high side region. The level shift region is separated from the high side region by the isolation region. A doped isolation region, which is disposed in the isolation region, includes a first doped portion and a second doped portion adjacent to the first doped portion. The depth of the first doped portion is decreased linearly along a first direction from the isolation region to the level shift region. The depth of the second doped portion is decreased linearly along a second direction from the isolation region to the high side region.