The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Jan. 24, 2018
Applicant:

Nuvoton Technology Corporation, Hsinchu, TW;

Inventors:

Md Imran Siddiqui, Hsinchu, TW;

Po-An Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/76 (2006.01); H03K 3/36 (2006.01); H01L 21/761 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/761 (2013.01); H03K 3/36 (2013.01);
Abstract

A level shifter is provided. The level shifter is located between a high-side circuit area and a low-side circuit area and includes a substrate, a buried island, and an isolation structure. The buried island has a first conductivity type and is located in the substrate. The isolation structure has a second conductivity type, is located in the substrate and surrounds the buried island. In addition, a dimension of the isolation structure near the high-side circuit area is different from a dimension of the isolation structure near the low-side circuit area. A semiconductor device including the level shifter is also provided.


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