The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Sep. 30, 2013
Applicant:
Nuvoton Technology Corporation, Hsinchu, TW;
Inventors:
Po-An Chen, Hsinchu, TW;
Md Imran Siddiqui, Hsinchu, TW;
Assignee:
Nuvoton Technology Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/423 (2006.01); H01L 29/74 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 29/7436 (2013.01); H01L 29/0634 (2013.01); H01L 29/0692 (2013.01); H01L 29/42368 (2013.01);
Abstract
A semiconductor device includes a metal-oxide-semiconductor field effect transistor (MOSFET), in which parasitic silicon controlled rectifier (SCR) equivalent circuits are formed in the MOSFET, and the MOSFET further includes a drain region. The drain region includes P-type heavily doped regions which are different from each other, in which the P-type heavily doped regions are respectively operated as anodes of the SCR equivalent circuits.