The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Dec. 28, 2017
Nuvoton Technology Corporation, Hsinchu, TW;
Nuvoton Technology Corporation, Hsinchu, TW;
Abstract
A HVJT structure of HVIC includes P-type substrate. Epitaxial layer is formed on the substrate. N-type doped structure is formed in the epitaxial layer, contacting with the substrate. P-type doped structure is in the N-type doped structure connecting with anode. The substrate, the N-type doped structure and the P-type doped structure form a PNP path along a perpendicular direction to the substrate, wherein NP provide bootstrap diode function and surround the high-side circuit at a horizontal direction. N-type cathode structure is in the epitaxial layer. N-type epitaxial doped region contacts with the substrate, between the PNP path and the N-type cathode structure, also surrounding the high-side circuit. Gate structure is over the N-type epitaxial doped region, between the P-type doped structure and N-type cathode structure. P-type base doped structure is in the epitaxial layer adjacent to the N-type doped structure, to provide a substrate voltage to the substrate.