The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
May. 26, 2014
Nuvoton Technology Corporation, Hsinchu, TW;
MD Imran Siddiqui, Hsinchu, TW;
Nuvoton Technology Corporation, Hsinchu, TW;
Abstract
A semiconductor device is disclosed. A substrate of a first conductivity type is provided. The substrate has a first area and a second area. An epitaxial layer of a second conductivity type is disposed on the front side of the substrate. A first doped region of the first conductivity type is disposed in the epitaxial layer in the first area, wherein a doping depth of the first doped region is gradually decreased away from the second area. At least one second doped region of the second conductivity type is disposed in the first doped region, wherein a doping depth of the at least one second doped region is gradually increased away from the second area. A dielectric layer is disposed on the epitaxial layer. A first conductive layer is disposed on the dielectric layer.