This inventor holds 31 USPTO granted patents and 5 published patent applications. Top assignees: Infineon Technologies Ag, Indian Institute of Science, Intel Mobile Communications Gmbh. Active years: 2012-2022.
Location History:
- Maharashtra, IN (2012)
- Mumbai, IN (2012 - 2016)
- Essex Junction, VT (US) (2013 - 2017)
- Unterhaching, DE (2014 - 2017)
- Bengaluru, IN (2019 - 2022)
- Karnataka Bangalore, IN (2022)
Company Filing History:
12 out of 15,016 
8 out of 145 
5 out of 511 
Years Active: 2012-2022
Areas of Expertise:
Title: Mayank Shrivastava: Innovator in Semiconductor Technology
Introduction
Mayank Shrivastava, a prominent inventor based in Bengaluru, India, has made significant contributions to the field of semiconductor technology, holding an impressive total of 31 patents. His work focuses on advanced semiconductor devices, particularly High Electron Mobility Transistors (HEMTs) and Drain Extended Tunnel Field Effect Transistors (DeTFETs), showcasing his expertise and innovative mindset.
Latest Patents
Among his latest patents, Mayank's development of a High Electron Mobility Transistor (HEMT) with a Reduced Surface Field (RESURF) junction stands out. This HEMT features a source electrode and a drain electrode with a gate electrode strategically placed in between. The innovative RESURF junction is designed to enhance performance by extending from the source to the drain. Under positive voltage application at the gate electrode, a buried channel layer is formed within the RESURF junction, which consists of n-type and p-type Gallium Nitride (GaN) layers.
Another notable patent is the Drain Extended Tunnel Field Effect Transistor (DeTFET), which offers improved performance compared to existing devices. This advanced device operates efficiently in high voltage and high power applications, ranging from 5V to 20V for System on Chip (SoC) implementations. It comprises a P+ SiGe source with an N-type Si epilayer, allowing for vertical tunneling of minority carriers. The design overcomes barriers imposed by traditional thermionic injection methods, resulting in enhanced ON current, reduced leakage, and improved RF characteristics.
Career Highlights
Mayank has had a notable career, working with prestigious organizations such as Infineon Technologies AG and the Indian Institute of Science. His roles in these institutions have allowed him to apply his innovative talents in developing state-of-the-art semiconductor solutions.
Collaborations
Throughout his professional journey, Mayank has collaborated with esteemed colleagues, including Harald Gossner and Ramgopal Rao. These partnerships have facilitated knowledge sharing and driven advancements in semiconductor research and innovation.
Conclusion
Mayank Shrivastava's contributions to semiconductor technology are remarkable, and his 31 patents reflect his commitment to innovation. With a focus on high-performance devices like HEMTs and DeTFETs, he continues to push the boundaries of technology, paving the way for future advancements in the industry. His work not only benefits his collaborators but also inspires the next generation of inventors in the realm of semiconductor technologies.