The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Jun. 04, 2019
Indian Institute of Science, Bangalore, IN;
Mayank Shrivastava, Bangalore, IN;
Vipin Joshi, Bangalore, IN;
Other;
Abstract
The present invention proposes a set of impurity doping configurations for GaN buffer in an AlGaN/GaN HEMT device to improve breakdown characteristics of the device. The breakdown characteristics depend on a unique mix of donor and acceptor traps and using carbon as a dopant increases both donor and acceptor trap concentrations, resulting in a trade-off in breakdown voltage improvement and device performance. A modified silicon and carbon co-doping is proposed, which enables independent control over donor and acceptor trap concentrations in the buffer, thus potentially improving breakdown characteristics of the device without adversely affecting the device performance.