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For the Inventor, By the Inventor

Furnari, Italy

Maurizio Francesco Perroni

This inventor holds 42 USPTO granted patents and 4 published patent applications and 8 EPO patents, primarily in Non-Volatile Memory. Top assignees: Stmicroelectronics S.r.l., Stmicroelectronics International N.v., Micron Technology Incorporated. Active years: 2004-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Maurizio Francesco Perroni. Retrieved from https://idiyas.com/inventor/maurizio-francesco-perroni

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 42 

% Patents Active = 83.3

 

Average Co-Inventor Count = 2.8

ph-index = 6

Forward Citations = 114(Granted Patents)


Location History:

  • Catania, IT (2004 - 2005)
  • Furnari (ME), IT (2008)
  • 98054 Furnari, IT (2009)
  • Furnari, IT (2004 - 2020)
  • Messina, IT (2008 - 2023)

Company Filing History:

goldMedal36 out of 5,694 
 
Stmicroelectronics S.r.l.
 patents
silverMedal3 out of 1,256 
 
Stmicroelectronics International N.v.
 patents
bronzeMedal1 out of 39,253 
 
Micron Technology Incorporated
 patents
4. 2 out of 834,570 
Other
 patents

Years Active: 2004-2026

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Areas of Expertise:
Phase Change Memory
Non-Volatile Memory
Row Decoder
Bit-Line Voltage
Programming Management
Synchronous Memory
Low Pin Count
Communication Interface
Testing Method
Circuit Optimization
Functional Parameters
Voltage Management
42 patents (USPTO):Explore Patents
1. 12756393 - Control device for a switching voltage regulator and control method (2026-10-06),
2. 12749532 - Non-volatile memory having first and second leday circuits, and electronic system and method (2026-09-29),
3. 11756614 - Phase change memory device, system including the memory device, and method for operating the memory device (2023-09-12),
4. 11380393 - Memory device and method for coupling a main bitline to two points of a local bitline (2022-07-05),
5. 11380380 - Non volatile memory device with an asymmetric row decoder and method for selecting word lines (2022-07-05),
6. 11355191 - Method for programming a phase-change memory device of differential type, phase-change memory device, and electronic system (2022-06-07),
7. 11328768 - Phase change memory device, system including the memory device, and method for operating the memory device (2022-05-10),
8. 11322201 - Bit-line voltage generation circuit for a non-volatile memory device and corresponding method (2022-05-03),
9. 11289158 - Non-volatile memory device including a row decoder with a pull-up stage controlled by a current mirror (2022-03-29),
10. 10818368 - Level shifter circuit having two-domain level shifting capability (2020-10-27),
11. 10720223 - Memory device with internal measurement of functional parameters (2020-07-21),
12. 10186317 - Phase change memory device and method of operation (2019-01-22),
13. 10115470 - Circuit and method for biasing nonvolatile memory cells (2018-10-30),
14. 10115462 - Address decoder for a non-volatile memory array using MOS selection transistors (2018-10-30),
15. 9978429 - Negative voltage management module for an address decoder circuit of a non-volatile memory device (2018-05-22),

Title: **Maurizio Francesco Perroni: A Pioneer in Memory Device Technologies**

Introduction

Maurizio Francesco Perroni, based in Furnari, Italy, is a prolific inventor renowned for his significant contributions to the field of memory devices. With an impressive portfolio of 38 patents, Perroni has continually advanced the technology surrounding phase-change memory and non-volatile memory devices, showcasing his innovative mindset and technical expertise.

Latest Patents

Among his most recent innovations, Perroni has developed a **phase-change memory device**, a system incorporating a memory device, and a comprehensive method for operating it. This innovation features a column decoder divided into two independently governed portions. It ensures that driving signals are configured to maintain comparable capacitive loads at both inputs of a sense amplifier during single-ended and double-ended reading operations. This design enhances the performance and reliability of memory cell selection.

Another notable patent is for a **non-volatile memory device** that integrates an asymmetric row decoder along with a method for selecting word lines. This device comprises an array of memory cells linked to word lines and a row decoder consisting of two pull-down stages positioned at opposite ends of the array. Each stage contains pull-down switching circuits that facilitate efficient word line selection and deselection processes, thereby optimizing overall memory operation.

Career Highlights

Perroni's career includes significant tenures at leading companies like **STMicroelectronics S.r.l.** and **Micron Technology Incorporated**. At these organizations, he has applied his inventive skills to enhance memory technology, contributing to the company's success and pushing the boundaries of existing technology.

Collaborations

Throughout his career, Perroni has collaborated with esteemed colleagues, including **Salvatore Polizzi** and **Giuseppe Castagna**. These partnerships have played a crucial role in developing innovative solutions and spearheading advancements in the memory device landscape.

Conclusion

Maurizio Francesco Perroni's contributions to memory device technology are profound and far-reaching. His dedication to innovation is evident in his extensive patent portfolio and the collaborations that have enhanced his work. As the technology continues to evolve, Perroni's inventions will undoubtedly play a pivotal role in shaping the future of memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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