This inventor holds 3 USPTO granted patents. Top assignees: Komatsu Denshi Kinzoku Kabushiki Kaisha, Komatsu Denshi Sinzoku Kabushiki, Komatsu Electronic Metals Co., Ltd.. Active years: 2001-2006.
Company Filing History:
1 out of 15 
1 out of 1 
1 out of 142 Years Active: 2001-2006
Title: Masayoshi Danbata: Innovator in Silicon Wafer Technology
Introduction
Masayoshi Danbata is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of silicon wafers. With a total of 3 patents to his name, Danbata's work has had a lasting impact on the industry.
Latest Patents
Danbata's latest patents include a method of manufacturing epitaxial silicon wafers. This method enables the stable production of high-quality, ultra-thin epitaxial silicon wafers. It describes a process that involves annealing the silicon wafer to smooth out defects before forming an epitaxial film through epitaxial growth. Another significant patent focuses on producing silicon ingots using the Czochralski method while doping the silicon single crystal with nitrogen. This method results in silicon wafers that possess satisfactory characteristics for use in semiconductor devices.
Career Highlights
Throughout his career, Masayoshi Danbata has worked with prominent companies such as Komatsu Denshi Sinzoku and Komatsu Electronic Metals Co., Ltd. His experience in these organizations has contributed to his expertise in silicon wafer technology and manufacturing processes.
Collaborations
Danbata has collaborated with notable individuals in the field, including Kazuya Togashi and Hiroyuki Kawahara. These partnerships have further enhanced his work and innovation in semiconductor technology.
Conclusion
Masayoshi Danbata's contributions to the field of silicon wafer technology are significant and impactful. His innovative methods and collaborations have paved the way for advancements in semiconductor manufacturing.