The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Nov. 18, 2002
Kazuya Togashi, Kanagawa, JP;
Masayoshi Danbata, Kanagawa, JP;
Kuniaki Arai, Kanagawa, JP;
Kaori Matsumoto, Kanagawa, JP;
Kazuya Togashi, Kanagawa, JP;
Masayoshi Danbata, Kanagawa, JP;
Kuniaki Arai, Kanagawa, JP;
Kaori Matsumoto, Kanagawa, JP;
Komatsu Denshi Kinzoku Kabushiki Kaisha, Kanagawa, JP;
Abstract
There is described a method which enables stable manufacture of a high-quality, ultra-thin epitaxial silicon wafer, as well as an epitaxial silicon wafer capable of bearing shipment manufactured by the method. A method of manufacturing an epitaxial silicon wafer having an ultra-thin epitaxial film, by means of forming an epitaxial film on a silicon wafer after having annealed the silicon wafer, includes the steps of: sufficiently smoothing COPs formed in the surface of the silicon wafer by means of appropriately setting annealing conditions according to an size of COPs in the vicinity of a surface of the silicon wafer; and forming an epitaxial film through epitaxial growth.