The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Feb. 12, 2002
Satoshi Komiya, Kanagawa, JP;
Shiro Yoshino, Hiratsuka, JP;
Masayoshi Danbata, Kanagawa, JP;
Kouichirou Hayashida, Kanagawa, JP;
Komatsu Denshi Sinzoku Kabushiki, Kanagawa, JP;
Abstract
A method for producing a silicon ingot through pulling up a silicon single crystal according to the Czochralski method, wherein the silicon single crystal is pulled up while being doped with nitrogen in such a condition as to form a part having a nitrogen content of 5×10 atoms/cm to 1×10 atoms/cm . A silicon wafer having a nitrogen content of 5×10 atoms/cm to 1×10 atoms/cm which is suitable for being treated with heat in a non-oxidizing atmosphere is manufactured of an ingot produced by using the method. The method can be used for producing a silicon wafer being doped with nitrogen and having satisfactory characteristics for use in a semiconductor device.