The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Jun. 15, 1999
Applicant:
Inventors:
Takeshi Hirose, Nagasaki, JP;
Hiroyuki Kawahara, Nagasaki, JP;
Takeo Tamura, Nagasaki, JP;
Masayoshi Danbata, Kanagawa, JP;
Assignee:
Komatsu Electronic Metals Co., Ltd., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/502 ;
U.S. Cl.
CPC ...
C30B 2/502 ;
Abstract
In an epitaxial-wafer fabricating process for epitaxially growing a silicon layer on the surface of a silicon wafer having the crystal orientation <100> or <111> and an inclination angle of 0°±1° in a reactive gas at a atmosphereicpressure, a growth temperature T is lower than a normal growth temperature by 50° C. to 100° C. during the process of epitaxial growth.