Nagasaki, Japan

Takeo Tamura

This inventor holds 1 USPTO granted patent. Top assignee: Komatsu Electronic Metals Co., Ltd.. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takeo Tamura. Retrieved from https://idiyas.com/inventor/takeo-tamura-j5uj3lk1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Takeo Tamura: Epitaxial-Wafer Fabrication Inventor.

Introduction

Takeo Tamura is an inventor associated with Nagasaki, Japan, and Komatsu Electronic Metals Co., Ltd. His work includes a patented process for fabricating epitaxial wafers.

Latest Patents

Tamura is credited with 1 patent: “Epitaxial-wafer fabricating process.” The invention concerns epitaxially growing a silicon layer on a silicon wafer with a crystal orientation of <100> or <111> and an inclination angle of 0° ± 1°. During epitaxial growth in a reactive gas at atmospheric pressure, the process uses a growth temperature 50°C to 100°C below the normal growth temperature.

Career Highlights

The patent describes a method for controlling the growth temperature during silicon epitaxy. Tamura’s listed company affiliation is Komatsu Electronic Metals Co., Ltd.

Collaborations

Takeshi Hirose and Masayoshi Danbata are identified as Tamura’s coworkers.

Conclusion

Takeo Tamura’s patent documents a lower-temperature approach to epitaxial silicon-wafer fabrication, connecting his inventive work with Komatsu Electronic Metals Co., Ltd.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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