Komatsu Electronic Metals Co., Ltd.

Komatsu Denshi Kinzoku Kabushiki Kaisha

Komatsu Denshi Sinzoku Kabushiki

Masayoshi Danbata

Shiro Yoshino

Kuniaki Arai

Kouichirou Hayashida

Hiroyuki Kawahara

Kazuya Togashi

Kaori Matsumoto

Takeo Tamura

Takeshi Hirose

There is described a method which enables stable manufacture of a high-quality, ultra-thin epitaxial silicon wafer, as well as an epitaxial silicon wafer capable of bearing shipment manufactured by the method. A method of manufacturing an epitaxial silicon wafer having an ultra-thin epitaxial film, by means of forming an epitaxial film on a silicon wafer after having annealed the silicon wafer, includes the steps of: sufficiently smoothing COPs formed in the surface of the silicon wafer by means of appropriately setting annealing conditions according to an size of COPs in the vicinity of a surface of the silicon wafer; and forming an epitaxial film through epitaxial growth.

Method of manufacturing epitaxial silicon wafer

A method for producing a silicon ingot through pulling up a silicon single crystal according to the Czochralski method, wherein the silicon single crystal is pulled up while being doped with nitrogen in such a condition as to form a part having a nitrogen content of 5&times;10 atoms/cm to 1&times;10 atoms/cm . A silicon wafer having a nitrogen content of 5&times;10 atoms/cm to 1&times;10 atoms/cm which is suitable for being treated with heat in a non-oxidizing atmosphere is manufactured of an ingot produced by using the method. The method can be used for producing a silicon wafer being doped with nitrogen and having satisfactory characteristics for use in a semiconductor device.

Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer

In an epitaxial-wafer fabricating process for epitaxially growing a silicon layer on the surface of a silicon wafer having the crystal orientation <100> or <111> and an inclination angle of 0&deg;&plusmn;1&deg; in a reactive gas at a atmosphereicpressure, a growth temperature T is lower than a normal growth temperature by 50&deg; C. to 100&deg; C. during the process of epitaxial growth.

Epitaxial-wafer fabricating process

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Kanagawa, Japan

Masayoshi Danbata