Ome, Japan

Masatoshi Hasegawa

This inventor holds 33 USPTO granted patents, primarily in Semiconductor Technology. Top assignees: Hitachi, Ltd., Hitachi Ulsi Systems Co., Ltd., Elpida Memory, Inc.. Active years: 1997-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masatoshi Hasegawa. Retrieved from https://idiyas.com/inventor/masatoshi-hasegawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 27.3

Average Co-Inventor Count = 3.4

ph-index = 12

Forward Citations = 755(Granted Patents)


Location History:

  • Tokyo, JP (2001 - 2006)
  • Hamura, JP (2005 - 2008)
  • Ome, JP (1997 - 2009)
  • Hachioji, JP (2010 - 2015)

Company Filing History:


Years Active: 1997-2015

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Areas of Expertise:
Semiconductor Device
Synchronous Memory Circuit
Integrated Circuit
Dynamic RAM
High-Speed Memory
Low Power Consumption
Redundancy Arrangement
Programmable Delays
Ferroelectric Capacitors
Memory Circuit
Testing Method
Storage Device
33 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Masatoshi Hasegawa in Semiconductor Devices

Introduction: Masatoshi Hasegawa, a prominent inventor based in Ome, Japan, has made significant strides in the field of semiconductor technology. With a remarkable portfolio comprising 33 patents, he has dedicated his career to developing innovative solutions that address critical challenges within the industry.

Latest Patents: Hasegawa's latest patents showcase his expertise in designing sophisticated semiconductor devices. One notable invention is a semiconductor device that eliminates the need for isolation circuits, effectively resolving the issue of through-current during power supply transitions. This design includes a first power supply line, a second power supply line, and a macro cell containing a core coupled to the second line, ensuring stability even during power shutdown scenarios. Another important patent involves a semiconductor device featuring SRAM (Static Random-Access Memory) that incorporates a power-off function, facilitating design flexibility related to storage capacity changes. This device comprises multiple layout units with memory arrays, peripheral circuits, and a switch group that sustains efficient operation.

Career Highlights: Masatoshi Hasegawa has garnered extensive experience during his tenure at notable companies, including Hitachi, Ltd. and Hitachi ULSI Systems Co., Ltd. His work at these institutions has paved the way for breakthroughs in semiconductor technology, further enhancing their reputations in the industry.

Collaborations: Throughout his career, Hasegawa has collaborated with esteemed professionals such as Kazuhiko Kajigaya and Yousuke Tanaka. These partnerships have contributed to the synergy of ideas and innovations, resulting in groundbreaking advancements in the semiconductor field.

Conclusion: Masatoshi Hasegawa's contributions to the world of semiconductor devices reflect his commitment to innovation and excellence. With 33 patents to his name, his work continues to impact the technology sector positively, leading to more efficient and effective solutions for modern electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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