The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Jun. 15, 2004
Masatoshi Hasegawa, Hamura, JP;
Kazutaka Mori, Kokubunji, JP;
Tomofami Hokari, Hamura, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor integrated circuit device realizing high integration and a simplified manufacturing process. The circuit includes a gate insulator with a first film thickness, a first N-channel MOSFET and a first P-channel MOSFET, in which a polysilicon layer consists of a gate electrode including an N-type impurity dose, and a gate insulator with a second film thickness thinner than the first film thickness. The circuit also includes a second N-channel MOSFET and a second P-channel MOSFET in which the polysilicon layers are doped with N-type impurity and P-type impurity, respectively. Gate electrodes of said first N-channel MOSFET and first P-channel MOSFET are formed as one body and connected to each other.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile