Annaka, Japan

Masahisa Endo

This inventor holds 8 USPTO granted patents. Top assignees: Shin-Etsu Handotai Co., Ltd., Nanoteco Corporation. Active years: 1991-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahisa Endo. Retrieved from https://idiyas.com/inventor/masahisa-endo-9tyq9prr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 75.0

Average Co-Inventor Count = 3.3

ph-index = 4

Forward Citations = 42(Granted Patents)


Location History:

  • Gunma, JP (1991 - 1994)
  • Matsuida, JP (1995)
  • Gunma-ken, JP (1998)
  • Annaka, JP (2000 - 2005)

Company Filing History:


Years Active: 1991-2005

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8 patents (USPTO):Explore Patents

Title: Masahisa Endo: Innovator in Light Emitting Devices

Introduction

Masahisa Endo is a prominent inventor based in Annaka, Japan. He has made significant contributions to the field of light emitting devices, holding a total of 8 patents. His innovative work has paved the way for advancements in light emission technology.

Latest Patents

One of his latest patents is a light emitting device that features a structure where a p-type InGaAs layer serves as an electrode contact layer, and an ITO electrode layer functions as an oxide transparent electrode layer. This configuration is formed on the first major surface of a light emitting layer section. On the second major surface, an n-type InGaAs layer is also used as an electrode contact layer, along with another ITO electrode layer. The ITO electrode layers, together with the p-type and n-type InGaAs layers, cover both major surfaces of the light emitting layer section entirely. Another notable patent is for a GaAsP-based light emitting element that maintains excellent light emission properties over time. This element features a p-n junction interface formed between a p-type GaAsP layer and an n-type GaAsP layer, with a nitrogen-doped zone included at the p-n junction interface. The manufacturing method involves varying the nitrogen concentration while keeping the mixed crystal ratio constant, allowing for optimization of emission luminance.

Career Highlights

Masahisa Endo has worked with notable companies such as Shin-Etsu Handotai Co., Ltd. and Nanoteco Corporation. His experience in these organizations has contributed to his expertise in the field of light emitting devices.

Collaborations

Throughout his career, Endo has collaborated with talented individuals, including Masato Yamada and Takao Takenaka. These partnerships have further enhanced his innovative capabilities and contributions to the industry.

Conclusion

Masahisa Endo's work in light emitting devices showcases his dedication to innovation and technology. His patents and collaborations reflect his significant impact on the field, making him a noteworthy inventor in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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