The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2000
Filed:
Dec. 29, 1997
Applicant:
Inventors:
Masahisa Endo, Annaka, JP;
Masataka Watanabe, Annaka, JP;
Tsuneyuki Kaise, deceased, late of Annaka, JP;
Assignee:
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 89 ; 117102 ; 117103 ; 117104 ; 117954 ; 117955 ;
Abstract
A GaAsP epitaxial wafer 10 which has a GaAs.sub.1-x P.sub.x (0.45<x<1) constant nitrogen concentration layer 6 formed by doping a constant composition layer with nitrogen wherein the constant nitrogen concentration layer 6 has the following upper and lower limits of nitrogen concentration:
Quick Actions:
Endo, Masahisa. (2000). Gaasp epitaxial wafer and a method for manufacturing it (U.S. Patent No. 6048397). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6048397
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile