The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Apr. 25, 2002
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A GaAsP-base light emitting element capable of sustaining an excellent light emission property for a long period, and a method for manufacturing thereof are provided. The light emitting element has a p-n junction interface responsible for light emission formed between a p-type GaAs P layer and an n-type GaAs P layer , and has a nitrogen-doped zone formed in a portion including the p-n junction interface between such p-type GaAs P layer and n-type GaAs P layer . Such element can be manufactured by fabricating a plurality of light emitting elements by varying nitrogen concentration Y of the nitrogen-doped zone while keeping a mixed crystal ratio a of the p-type GaAs P layer and n-type GaAs P layer constant; finding an emission luminance/nitrogen concentration relationship by measuring emission luminance of the individual light emitting elements; and adjusting the nitrogen concentration of the nitrogen-doped zone so as to fall within a range from 1.05Y to 1.5Y , where Y is defined as a peak nitrogen concentration whereat the emission luminance of the light emitting element will become maximum at a mixed crystal ratio a.