The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Jan. 29, 2002
Nobuhiko Noto, Annaka, JP;
Masato Yamada, Annaka, JP;
Masahisa Endo, Annaka, JP;
Hitoshi Ikeda, Annaka, JP;
Shinji Nozaki, Kawasaki, JP;
Kazuo Uchida, Tokyo, JP;
Hiroshi Morisaki, Tsurugashima, JP;
Nobuhiko Noto, Annaka, JP;
Masato Yamada, Annaka, JP;
Masahisa Endo, Annaka, JP;
Hitoshi Ikeda, Annaka, JP;
Shinji Nozaki, Kawasaki, JP;
Kazuo Uchida, Tokyo, JP;
Hiroshi Morisaki, Tsurugashima, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Nanoteco Corporation, Tokyo, JP;
Abstract
A light emitting devicehas a structure in which a p type InGaAs layeras an electrode contact layer and an ITO electrode layeras an oxide transparent electrode layer are formed in the order in a first major surfaceside of a light emitting layer section. In a second major surfaceside of the light emitting layer section, an n type InGaAs layeras an electrode contact layer and an ITO electrode layeras an oxide transparent electrode layer are formed in the order. The ITO electrode layersandtogether with the p type InGaAs layerand the n type InGaAs layerare formed on the respective both major surfacesandof the light emitting layer sectionso as to cover the respective both major surfacesandin the entirety thereof.