Shin-etsu Handotai Co., Ltd.

Nanoteco Corporation

Masahisa Endo

Masato Yamada

Nobuhiko Noto

Masataka Watanabe

Takao Takenaka

Akio Nakamura

Masayuki Shinohara

Shinji Nozaki

Susumu Higuchi

Hiroshi Morisaki

Hitoshi Ikeda

Kazuo Uchida

Tsuneyuki Kaise

Tsuneyuki Kaise, Deceased

Toshiharu Takahashi

A light emitting devicehas a structure in which a p type InGaAs layeras an electrode contact layer and an ITO electrode layeras an oxide transparent electrode layer are formed in the order in a first major surfaceside of a light emitting layer section. In a second major surfaceside of the light emitting layer section, an n type InGaAs layeras an electrode contact layer and an ITO electrode layeras an oxide transparent electrode layer are formed in the order. The ITO electrode layersandtogether with the p type InGaAs layerand the n type InGaAs layerare formed on the respective both major surfacesandof the light emitting layer sectionso as to cover the respective both major surfacesandin the entirety thereof.

Light emitting device

A GaAsP-base light emitting element capable of sustaining an excellent light emission property for a long period, and a method for manufacturing thereof are provided. The light emitting element has a p-n junction interface responsible for light emission formed between a p-type GaAs P layer and an n-type GaAs P layer , and has a nitrogen-doped zone formed in a portion including the p-n junction interface between such p-type GaAs P layer and n-type GaAs P layer . Such element can be manufactured by fabricating a plurality of light emitting elements by varying nitrogen concentration Y of the nitrogen-doped zone while keeping a mixed crystal ratio a of the p-type GaAs P layer and n-type GaAs P layer constant; finding an emission luminance/nitrogen concentration relationship by measuring emission luminance of the individual light emitting elements; and adjusting the nitrogen concentration of the nitrogen-doped zone so as to fall within a range from 1.05Y to 1.5Y , where Y is defined as a peak nitrogen concentration whereat the emission luminance of the light emitting element will become maximum at a mixed crystal ratio a.

Light emitting element and method for manufacturing thereof

A GaAsP epitaxial wafer 10 which has a GaAs.sub.1-x P.sub.x (0.45&lt;x&lt;1) constant nitrogen concentration layer 6 formed by doping a constant composition layer with nitrogen wherein the constant nitrogen concentration layer 6 has the following upper and lower limits of nitrogen concentration:

GaAsP epitaxial wafer and a method for manufacturing it

A method for a vapor-phase growth of a GaAs.sub.1-x P.sub.x epitaxial layer having a uniform thickness is disclosed. This method allows the GaAs.sub.1-x P.sub.x epitaxial layer (wherein x stands for an alloy composition satisfying the expression, 0.ltoreq.x.ltoreq.1) to be formed on a plurality of semiconductor single crystal substrates 1 by setting the semiconductor single crystal substrates 1 in place on a wafer holder 16 disposed inside a vapor-phase growth apparatus 30 in an amount of not less than 70% as the covering ratio of the total surface area of the substrates to the surface area of the wafer holder 16.

Method for vapor-phase growth

A GaP pure green light emitting element substrate comprising an n-type GaP layer 12 and a p-type GaP layer 14 formed on a GaP single crystal substrate 10, characterized by the fact that an intermediate GaP layer 13 is formed at the pn junction portion between said n-type GaP layer 12 and said p-type GaP layer 14, wherein said intermediate GaP layer has a donor concentration N.sub.D of less than 1.times.10.sup.-16 atoms/cm.sup.3 and an acceptor concentration N.sub.A nearly equal to the donor concentration N.sub.D. The thickness of the intermediate GaP layer 13 is in the range of 3-5 micrometers.

Gap pure green light emitting element substrate

A method and an apparatus capable of efficiently producing an epitaxial layer grown at one time on a multiplicity of substrates with uniform thickness and quality are disclosed, in which a sealable growth chamber filled in a solution used to achieve liquid-phase epitaxial growth and holding therein at least one row of thin plate-like substrate is turned about the horizontal axis. The growth chamber is tilted or overturned so that the solution in the growth chamber is stirred homogeneously and the effect of gravity on the solution is excluded. A solution chamber for holding therein the solution is connected with the growth chamber via a gate valve. After the liquid-phase epitaxial growth, the growth chamber is overturned and then the gate valve is opened so that the solution in the growth chamber returns to the solution chamber. Thus, reuse of the solution is possible.

Apparatus for liquid-phase epitaxial growth

To manufacture epitaxial wafers with a smaller amount of semiconductor crystals at a lower cost by means of an efficient epitaxial growth process. An epitaxial wafer is made by forming, by means of epitaxial growth, GaAlAs layers with identical structures on both sides of a GaAs substrate wafer with the crystal plane orientation of {100}. The epitaxial wafer is then divided in the GaAs substrate wafer portion into two pieces to obtain two epitaxial wafers. To perform the epitaxial growth process, a plurality of GaAs substrate wafers are held at their edges and then the GaAs substrate wafers are placed in a Ga solution at prescribed spatial intervals. To divide the epitaxial wafer in the GaAs substrate portion into two pieces, the substrate wafer portion is cut parallel to the main surface. Or, the GaAs substrate wafer can also be removed by means of etching while the epitaxial wafer is rotated at a high speed in the etching solution.

Method of making epitaxial wafers

An epitaxial wafer of gallium phosphide single crystal having an epitaxial layer of gallium phosphide arsenide mixed crystal grown on the surface by the method of vapor-phase epitaxial growth can be freed from surface defects and greatly improved in respect of the electroluminescent intensity of the light-emitting diode prepared therefrom, yield of the light-emitting diodes which can be obtained from said single epitaxial wafer the growth rate of the epitaxial layer when the substrate wafer has a crystallographic surface plane which is inclined from the {001} plane in the &lt;110&gt; direction by 8.degree. to 15.degree. or a crystallographically equivalent plane thereto.

Growing community of inventors

Annaka, Japan

Masahisa Endo