Hakusan, Japan

Masahiro Shimura

This inventor holds 5 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 2016-2019.


% Patents Active = 80.0

Average Co-Inventor Count = 4.2

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Ishikawa, JP (2018)
  • Hakusan Ishikawa, JP (2016 - 2019)

Company Filing History:


Years Active: 2016-2019

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5 patents (USPTO):Explore Patents

Title: Masahiro Shimura: Innovator in Semiconductor Technology

Introduction

Masahiro Shimura is a prominent inventor based in Hakusan, Ishikawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Shimura's latest patents focus on innovative semiconductor devices. One of his patents describes a semiconductor device that includes a first conductivity type first semiconductor region, a second conductivity type second semiconductor region, a second conductivity type third semiconductor region, a first conductivity type fourth semiconductor region, a gate insulating portion, a gate electrode, and first and second electrodes. The design features a first semiconductor region that includes first and second portions, while the second semiconductor region comprises third and fourth portions. The gate electrode is positioned on the gate insulating portion, over the first semiconductor region and a portion of the third semiconductor region. The first electrode is connected to the fourth semiconductor region, and the second electrode is strategically placed over the first portion, the third portion, and the gate electrode, maintaining a distance from the first electrode.

Another patent by Shimura outlines a semiconductor device that consists of a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, which is provided on a part of the first semiconductor region. Additionally, a third semiconductor region of the first conductivity type is included, along with a gate electrode, a first electrode, and a conductive portion. The gate electrode is situated on another part of the second semiconductor region via a gate insulating portion. The first electrode is connected to the third semiconductor region, while the conductive portion is arranged on another part of the first semiconductor region through a first insulating portion, ensuring electrical connection to the first electrode.

Career Highlights

Masahiro Shimura is currently employed at Kabushiki Kaisha Toshiba, where he continues to innovate in semiconductor technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Shimura has collaborated with notable colleagues, including Syotaro Ono and Hideyuki Ura, contributing to the advancement of semiconductor technologies through teamwork and shared expertise.

Conclusion

Masahiro Shimura's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work

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