The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Mar. 09, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Syotaro Ono, Kanazawa Ishikawa, JP;
Hideyuki Ura, Hakusan Ishikawa, JP;
Masahiro Shimura, Hakusan Ishikawa, JP;
Hiroaki Yamashita, Hakusan Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In general, according to one embodiment, a semiconductor device includes, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a fourth semiconductor region, a fifth semiconductor region, and a gate electrode. The third semiconductor region includes a first portion and a second portion. The first portion is provided between the second semiconductor regions adjacent to each other. An amount of impurity of the second conductivity type in the first portion is greater than an amount of impurity of the first conductivity type in the second semiconductor region contiguous to the first portion. The second portion is arranged with a part of the first semiconductor region. An amount of impurity of the second conductivity type in the second portion is smaller than an amount of impurity of the first conductivity type in the part of the first semiconductor region.