The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Aug. 20, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Hiroaki Yamashita, Hakusan Ishikawa, JP;
Syotaro Ono, Kanazawa Ishikawa, JP;
Hideyuki Ura, Nonoichi Ishikawa, JP;
Masahiro Shimura, Hakusan Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a plurality of first semiconductor regions of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the first conductivity type, and a gate electrode. An impurity concentration of the second conductivity type of the third semiconductor region is higher than an impurity concentration of the second conductivity type of the second semiconductor regions. The fourth semiconductor region is provided on the first semiconductor regions. The gate electrode provided on the fourth semiconductor region with a gate insulation layer interposed. The gate electrode extends in a third direction. The third direction intersects the first direction. The third direction is parallel to a plane including the first direction and the second direction.