The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Aug. 14, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Hiroaki Yamashita, Hakusan Ishikawa, JP;
Syotaro Ono, Kanazawa Ishikawa, JP;
Hideyuki Ura, Nonoichi Ishikawa, JP;
Masahiro Shimura, Hakusan Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment includes a first semiconductor layer of a first conductivity type, second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, a gate electrode, an insulating layer, and a first electrode. The first semiconductor layer includes first semiconductor regions. The second semiconductor regions are provided respectively between the first semiconductor regions. The insulating layer is provided between the gate electrode and the third semiconductor region. The first electrode includes a first portion and a second portion. The first portion is connected to the first semiconductor region. The second portion is provided on the fourth semiconductor region side of the first portion. The first electrode is provided on the first semiconductor region and on the second semiconductor region. The first electrode is provided around the fourth semiconductor region.