The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Aug. 30, 2016
Kabushiki Kaisha Toshiba, Tokyo, JP;
Hisao Ichijo, Kanazawa Ishikawa, JP;
Syotaro Ono, Kanazawa Ishikawa, JP;
Masahiro Shimura, Hakusan Ishikawa, JP;
Hideyuki Ura, Nonoichi Ishikawa, JP;
Hiroaki Yamashita, Hakusan Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a first conductivity type first semiconductor region, a second conductivity type second semiconductor region, a second conductivity type third semiconductor region, a first conductivity type fourth semiconductor region, a gate insulating portion, a gate electrode, and first and second electrodes. The first semiconductor region includes first and second portions. The second semiconductor region includes third and fourth portions. The gate electrode is on the gate insulating portion and over the first semiconductor region and a portion of the third semiconductor region. The first electrode is on, and electrically connected to, the fourth semiconductor region. The second electrode is over the first portion, the third portion, and the gate electrode, and spaced from the first electrode.