This inventor holds 12 USPTO granted patents and 1 EPO patent. Top assignees: Infineon Technologies Ag, Indian Institute of Technology Bombay. Active years: 2012-2016.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Maharashtra, IN (2012 - 2013)
- Mumbai, IN (2012 - 2016)
Company Filing History:


Years Active: 2012-2016
Title: Maryam Shojaei Baghini: Innovator in Semiconductor Technology
Introduction
Maryam Shojaei Baghini is a prominent inventor based in Mumbai, India. She has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. Her work focuses on high voltage semiconductor devices and field-effect devices, showcasing her expertise and innovative spirit.
Latest Patents
One of her latest patents involves high voltage semiconductor devices. In this invention, the semiconductor device includes a first source of a first doping type disposed in a substrate, with a first drain of the same doping type also in the substrate. A first gate region is positioned between the first source and the first drain, while a first channel region of a second doping type is located under the first gate region. The second doping type is opposite to the first doping type. Additionally, a first extension region of the first doping type is situated between the first gate and the first drain, forming part of a first fin disposed in or over the substrate. A first isolation region is placed between the first extension region and the first drain, and a first well region of the first doping type is located under the first isolation region, electrically coupling the first extension region with the first drain.
Another notable patent is related to a field-effect device and its manufacturing method. This invention includes a body region, a first source/drain region of a first conductivity type, and a second source/drain region. It also features a pocket implant region adjacent to the first source/drain region, which is of a second conductivity type, different from the first. The body region physically contacts the pocket implant region, demonstrating the complexity and innovation in her designs.
Career Highlights
Maryam has worked with esteemed organizations such as Infineon Technologies and the Indian Institute of Technology Bombay. Her experience in these institutions has allowed her to refine her skills and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Throughout her career, Maryam has collaborated with notable colleagues, including Ramgopal Rao and Mayank Shrivastava. These partnerships have further enriched her work and expanded her impact in the field.
Conclusion
Maryam Shojaei Baghini is a trailblazer in semiconductor technology, with a remarkable portfolio of patents and a strong career background. Her innovative contributions continue to shape the future of the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile