The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2013

Filed:

Aug. 08, 2008
Applicants:

Mayank Shrivastava, Mumbai, IN;

Harald Gossner, Riemerling, DE;

Ramgopal Rao, Mumbai, IN;

Maryam Shojaei Baghini, Mumbai, IN;

Inventors:

Mayank Shrivastava, Mumbai, IN;

Harald Gossner, Riemerling, DE;

Ramgopal Rao, Mumbai, IN;

Maryam Shojaei Baghini, Mumbai, IN;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 27/10 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments relate to a field-effect transistor that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region of the first conductivity type, and a pocket implant region adjacent to the first source/drain region, the pocket implant region being of a second conductivity type, wherein the second conductivity type is different from the first conductivity type. The body region physically contacts the pocket implant region.


Find Patent Forward Citations

Shrivastava, Mayank. (2013). Field-effect device and manufacturing method thereof (U.S. Patent No. 8354710). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8354710

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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