The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Oct. 09, 2009
Mayank Shrivatsava, Mumbai, IN;
Maryam Shojaei Baghini, Mumbai, IN;
Dinesh Kumar Sharma, Mumbai, IN;
Ramgopal Rao, Mumbai, IN;
Mayank Shrivatsava, Mumbai, IN;
Maryam Shojaei Baghini, Mumbai, IN;
Dinesh Kumar Sharma, Mumbai, IN;
Ramgopal Rao, Mumbai, IN;
Indian Institute of Technology, Bombay, Mumbai, IN;
Abstract
A nonvolatile floating gate analog memory cell () comprising a transistor having a source () and drain () formed inside a substrate or on an insulator body (not shown) and separated by a channel (). The memory cell comprises at least one floating gate () formed on one side of the source and drain. () is a control gate formed on one side of the floating gate and connected to a first voltage (). () is a back gate formed on the other side of the source and drain and connected to a second voltage (). The channel is separated from the floating gate and the back gate by an insulation layer (). The control gate is separated from the floating gate by an insulation layer () and the source and drain are isolated from the back gate, control gate and floating gate(s) by a spacer (). The second voltage changes the intrinsic threshold voltage linearly during programming so that the programmed threshold voltage corresponds to the second voltage.