The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2012

Filed:

Aug. 08, 2008
Applicants:

Mayank Shrivastava, Mumbai, IN;

Harald Gossner, Riemerling, DE;

Ramgopal Rao, Mumbai, IN;

Maryam Shojaei Baghini, Mumbai, IN;

Inventors:

Mayank Shrivastava, Mumbai, IN;

Harald Gossner, Riemerling, DE;

Ramgopal Rao, Mumbai, IN;

Maryam Shojaei Baghini, Mumbai, IN;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In an embodiment, a semiconductor device is provided. The semiconductor device may include a first diffusion region, a second diffusion region an active region disposed between the first diffusion region and the second diffusion region, a control region disposed above the active region, a first trench isolation disposed laterally adjacent to the first diffusion region opposite to the active region, and a second trench isolation disposed between the second diffusion region and the active region. The second trench isolation may have a smaller depth than the first trench isolation.


Find Patent Forward Citations

Shrivastava, Mayank. (2012). Semiconductor devices with trench isolations (U.S. Patent No. 8097930). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8097930

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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