The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Aug. 25, 2010
Mayank Shrivastava, Mumbai, IN;
Maryam Shojaei Baghini, Mumbai, IN;
Cornelius Christian Russ, Diedorf, DE;
Harald Gossner, Riemerling, DE;
Ramgopal Rao, Mumbai, IN;
Mayank Shrivastava, Mumbai, IN;
Maryam Shojaei Baghini, Mumbai, IN;
Cornelius Christian Russ, Diedorf, DE;
Harald Gossner, Riemerling, DE;
Ramgopal Rao, Mumbai, IN;
Infineon Technologies AG, Neubiberg, DE;
Abstract
In one embodiment, the semiconductor device includes a first source of a first doping type disposed in a substrate. A first drain of the first doping type is disposed in the substrate. A first gate region is disposed between the first source and the first drain. A first channel region of a second doping type is disposed under the first gate region. The second doping type is opposite to the first doping type. A first extension region of the first doping type is disposed between the first gate and the first drain. The first extension region is part of a first fin disposed in or over the substrate. A first isolation region is disposed between the first extension region and the first drain. A first well region of the first doping type is disposed under the first isolation region. The first well region electrically couples the first extension region with the first drain.