The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2014

Filed:

Mar. 23, 2009
Applicants:

Mayank Shrivastava, Mumbai, IN;

Harald Gossner, Riemerling, DE;

Ramgopal Rao, Mumbai, IN;

Maryam Shojaei Baghini, Mumbai, IN;

Inventors:

Mayank Shrivastava, Mumbai, IN;

Harald Gossner, Riemerling, DE;

Ramgopal Rao, Mumbai, IN;

Maryam Shojaei Baghini, Mumbai, IN;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

In various embodiments, a semiconductor device is provided. The semiconductor device may include a first source/drain region, a second source/drain region, an active region electrically coupled between the first source/drain region and the second source/drain region, a trench disposed between the second source/drain region and at least a portion of the active region, a first isolation layer disposed over the bottom and the sidewalls of the trench, electrically conductive material disposed over the isolation layer in the trench, a second isolation layer disposed over the active region, and a gate region disposed over the second isolation layer. The electrically conductive material may be coupled to an electrical contact.


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