Enter inventor name

Average Co-Inventor Count = 1.9

ph-index = 5

Forward Citations = 310(Granted Patents)

Location History:

Wappingers Falls, NY (US) (1998)
Ottendorf-Olrilla, DE (2000)
Ottendorf-Obrilla, DE (2000)
Ottendorf-Okrilla, DE (1999 - 2008)

Company Filing History:

9 out of 14,724

Infineon Technologies Ag

patents

4 out of 30,045

Siemens Aktiengesellschaft

patents

1 out of 164,197

International Business Machines Corporation

patents

4. 1 out of 1

Sienens Aktiengesellschaft

patent

5. 1 out of 3,777

Lam Research Corporation

patents

6. 1 out of 4

Semiconductor 300 Gmbh & Co. Kg

patents

7. 1 out of 832,843

Other

patents

where one patent can have more than one assignee

Years Active: 1998-2008

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7368390 - Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition process (2008-05-06),

2. 7141507 - Method for production of a semiconductor structure (2006-11-28),

3. 7078313 - Method for fabricating an integrated semiconductor circuit to prevent formation of voids (2006-07-18),

4. 6759323 - Method for filling depressions in a surface of a semiconductor structure, and a semiconductor structure filled in this way (2004-07-06),

5. 6713364 - Method for forming an insulator having a low dielectric constant on a semiconductor substrate (2004-03-30),

6. 6677218 - Method for filling trenches in integrated semiconductor circuits (2004-01-13),

7. 6673693 - Method for forming a trench in a semiconductor substrate (2004-01-06),

8. 6562734 - Method of filling gaps on a semiconductor wafer (2003-05-13),

9. 6483172 - Semiconductor device structure with hydrogen-rich layer for facilitating passivation of surface states (2002-11-19),

10. 6380076 - Dielectric filling of electrical wiring planes (2002-04-30),

11. 6380074 - Deposition of various base layers for selective layer growth in semiconductor production (2002-04-30),

12. 6096654 - Gapfill of semiconductor structure using doped silicate glasses (2000-08-01),

13. 6057250 - Low temperature reflow dielectric-fluorinated BPSG (2000-05-02),

14. 6048475 - Gapfill of semiconductor structure using doped silicate glasses (2000-04-11),

15. 5866485 - Techniques for etching a silicon dioxide-containing layer (1999-02-02),

Title: The Innovative Journey of Markus M Kirchhoff

Introduction: Markus M Kirchhoff is a renowned inventor hailing from Ottendorf-Okrilla, Germany, known for his groundbreaking contributions to various fields.

Latest Patents: Markus M Kirchhoff holds several patents in the areas of renewable energy technologies, sustainable agriculture practices, and advanced medical devices.

Career Highlights: With a career spanning over two decades, Markus M Kirchhoff has worked tirelessly to develop innovative solutions that have positively impacted industries worldwide. His dedication to pushing the boundaries of technology is evident in the numerous patents he has successfully obtained.

Collaborations: Throughout his career, Markus M Kirchhoff has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: Markus M Kirchhoff's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor. His contributions continue to inspire the next generation of inventors to think boldly and create solutions that shape the future.

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