The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Sep. 17, 2001
Applicant:
Inventor:
Markus Kirchhoff, Ottendorf-Okrilla, DE;
Assignee:
Semiconductor 300 GmbH & Co. KG, Dresden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract
A method of filling gaps on a semiconductor wafer with a dielectric material employs a plasma enhanced chemical vapor deposition (PECVD) process with a temperature in the range of 500 to 700° C. As a result of the deposition process, gaps resulting from e.g. shallow trench isolation or premetal dielectric techniques are filled homogeneously without any voids. The deposition may be improved by applying two radio frequency signals with different frequencies.