The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Feb. 26, 2001
Applicant:
Inventor:
Markus Kirchhoff, Ottendorf-Okrilla, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
Abstract
A method for filling depressions in a surface of a semiconductor structure, and a semiconductor structure filled in this way. On a semiconductor structure, in depressions on the surface, in particular below the first metal structure plane, a diffusion barrier layer is deposited, preferably with the aid of plasma-enhanced vapor phase deposition, during which the ions contained in the plasma are accelerated perpendicularly to the surface, resulting in non-conformal deposition of the diffusion barrier layer.