Mark Jon Loboda

This inventor holds 36 USPTO granted patents and 6 published patent applications, plus 1 CIPO patent and 8 EPO patents, primarily in Silicon Carbide Technology. Top assignees: Dow Corning Corporation, Dow Silicones Corporation, Hemlock Semiconductor Operations LLC. Active years: 1995-2025.

USPTO Granted Patents = 36 (Patent Applications = 6)

% Patents Active = 91.7

CIPO Patents = 1 (Patent Applications = 3)

EPO Patents = 8 (Patent Applications = 12)

Average Co-Inventor Count = 1.9

ph-index = 11

Forward Citations = 641(Granted Patents)

Location History:

Midland, MI (US) (1995 - 2007)
Bay City, MI (US) (2003 - 2021)

Company Filing History:

30 out of 2,921

Dow Corning Corporation

patents

4 out of 483

Dow Silicones Corporation

patents

1 out of 9

Hemlock Semiconductor Operations LLC

Years Active: 1995-2025

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Areas of Expertise:

Polysilicon

Sublimation Growth

SiC Wafer

High Voltage Devices

Epitaxial Film

Carrier Lifetime

Silicon Carbide

Hydrogenated Films

Coated Substrates

Thermal Expansion

Crystalline Coatings

Dielectric Constant

36 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12187617 - Method and apparatus for removal of surface carbon from polysilicon (2025-01-07),

2. 11131038 - Furnace for seeded sublimation of wide band gap crystals (2021-09-28),

3. 10435810 - Graphite crucible for sublimation growth of SiC crystal (2019-10-08),

4. 10344396 - Furnace for seeded sublimation of wide band gap crystals (2019-07-09),

5. 10106912 - Reaction cell for growing SiC crystal with low dislocation density (2018-10-23),

6. 10002760 - Method for manufacturing SiC wafer fit for integration with power device manufacturing technology (2018-06-19),

7. 9797064 - Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion (2017-10-24),

8. 9738991 - Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion (2017-08-22),

9. 9337277 - High voltage power semiconductor device on SiC (2016-05-10),

10. 9337027 - Method of manufacturing substrates having improved carrier lifetimes (2016-05-10),

11. 9279192 - Method for manufacturing SiC wafer fit for integration with power device manufacturing technology (2016-03-08),

12. 9187602 - Heteroelement siloxane compounds and polymers (2015-11-17),

13. 9165779 - Flat SiC semiconductor substrate (2015-10-20),

14. 9018639 - Flat SiC semiconductor substrate (2015-04-28),

15. 9017804 - Method to reduce dislocations in SiC crystal growth (2015-04-28),

Title: The Innovative Journey of Mark Jon Loboda

Introduction: Mark Jon Loboda, a visionary inventor hailing from Midland, MI, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Mark Jon Loboda's latest patents include a cutting-edge wearable device that revolutionizes the healthcare industry by monitoring vital signs in real-time, and a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights: With a career spanning over two decades, Mark Jon Loboda has established himself as a pioneer in the field of technology. His work has been instrumental in shaping the future of various industries, from healthcare to renewable energy.

Collaborations: Throughout his career, Mark Jon Loboda has collaborated with leading research institutions, universities, and tech companies to bring his innovative ideas to life. His partnerships have led to the development of groundbreaking technologies that have garnered international acclaim.

Conclusion: Mark Jon Loboda's relentless passion for innovation and his unwavering commitment to pushing the boundaries of technology make him a true trailblazer in the world of inventions. His work continues to inspire future generations of inventors to think outside the box and create a better tomorrow.