The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Aug. 09, 2013
Applicant:
Dow Corning Corporation, Midland, MI (US);
Inventor:
Mark Loboda, Bay City, MI (US);
Assignee:
DOW CORNING CORPORATION, Midland, MI (US);
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/02 (2006.01); C30B 23/00 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 23/025 (2013.01); C30B 23/002 (2013.01); C30B 23/005 (2013.01); C30B 29/36 (2013.01); Y10T 428/24355 (2015.01);
Abstract
A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system.