The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Mar. 11, 2015
Applicant:
Dow Corning Corporation, Midland, MI (US);
Inventors:
Mark Loboda, Bay City, MI (US);
Christopher Parfeniuk, Midland, MI (US);
Assignee:
DOW CORNING CORPORATION, Midland, MI (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); H01L 21/02013 (2013.01); H01L 21/02019 (2013.01); H01L 21/02021 (2013.01); H01L 21/02035 (2013.01); H01L 29/1608 (2013.01);
Abstract
Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR). The resulting SiC wafer has a mirror-like surface that is fit for epitaxial deposition of SiC. The specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR) of the wafer are preserved following the addition of the epitaxy layer.