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For the Inventor, By the Inventor

Boise, ID, United States of America

Mark E Jost

USPTO Granted Patents = 48

Average Co-Inventor Count = 2.4

ph-index = 13

Forward Citations = 734(Granted Patents)


Company Filing History:

goldMedal47 out of 37,905 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 832,680 
Other
 patents

Years Active: 1996-2011

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48 patents (USPTO):Explore Patents
1. 7955976 - Methods of forming semiconductor structures (2011-06-07),
2. 7659630 - Interconnect structures with interlayer dielectric (2010-02-09),
3. 7326647 - Dry etching process to form a conductive layer within an opening without use of a mask during the formation of a semiconductor device (2008-02-05),
4. 7279414 - Method of forming interconnect structure with interlayer dielectric (2007-10-09),
5. 6982228 - Methods of etching a contact opening over a node location on a semiconductor substrate (2006-01-03),
6. 6828252 - Method of etching a contact opening (2004-12-07),
7. 6790762 - Method of making an electrical device including an interconnect structure (2004-09-14),
8. 6787472 - Utilization of disappearing silicon hard mask for fabrication of semiconductor structures (2004-09-07),
9. 6689693 - Methods for utilization of disappearing silicon hard mask for fabrication of semiconductor structures (2004-02-10),
10. 6653241 - Methods of forming protective segments of material, and etch stops (2003-11-25),
11. 6620734 - Methods of forming protective segments of material, and etch stops (2003-09-16),
12. 6605516 - Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns (2003-08-12),
13. 6596641 - Chemical vapor deposition methods (2003-07-22),
14. 6534408 - Utilization of disappearing silicon hard mask for fabrication of semiconductor structures (2003-03-18),
15. 6461963 - Utilization of disappearing silicon hard mask for fabrication of semiconductor structures (2002-10-08),

Title: Unveiling the Innovation Journey of Mark E Jost

Introduction

Mark E Jost, a prolific inventor based in Boise, ID (US), has made significant contributions to the field of semiconductor structures with an impressive portfolio of 48 patents. His relentless pursuit of innovation has propelled the industry forward, especially in the realm of forming semiconductor structures and interconnect technologies.

Latest Patents

Among his latest patents are groundbreaking methods of forming semiconductor structures. These methods involve intricate processes such as disposing electrically conductive material within openings, passivating surfaces with nitrogen-containing species, and introducing materials to create interlayer dielectrics. Additionally, Jost's innovations include interconnect structures with meticulously designed interlayer dielectrics that are free from oxidation, setting new benchmarks in the industry.

Career Highlights

Throughout his career, Mark E Jost has showcased his expertise at renowned companies such as Micron Technology Incorporated, where his visionary ideas have translated into tangible technological advancements. His innovative spirit and commitment to excellence have consistently propelled him to the forefront of the semiconductor industry, shaping its trajectory with each patent he secures.

Collaborations

Jost's collaborative efforts with esteemed coworkers like Charles H Dennison and Kunal R Parekh have further enriched his innovative pursuits. Together, they have synergized their talents to explore new frontiers in semiconductor technology, driving forward-thinking solutions and fostering a culture of creativity and discovery.

Conclusion

In conclusion, Mark E Jost stands as a trailblazing inventor whose ingenuity and dedication have revolutionized the semiconductor industry. His patented inventions not only demonstrate technical prowess but also embody a relentless quest for innovation that continues to inspire future generations of inventors and engineers. With a remarkable track record and a commitment to pushing boundaries, Jost's legacy is sure to endure as a cornerstone of technological advancement.

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