Hamburg, Germany

Margret Harms

This inventor holds 7 USPTO granted patents. Top assignee: U.S. Philips Corporation. Active years: 1983-1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Margret Harms. Retrieved from https://idiyas.com/inventor/margret-harms

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 59(Granted Patents)


Company Filing History:


Years Active: 1983-1991

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7 patents (USPTO):Explore Patents

Title: The Innovative Genius of Margret Harms

Introduction

Margret Harms, an accomplished inventor based in Hamburg, Germany, has made significant strides in the field of radiation lithography. With a remarkable portfolio of seven patents, she continues to push the boundaries of technology and innovation. Her latest inventions focus on methods to enhance the manufacturing processes for vital components in lithographic applications.

Latest Patents

One of Margret's notable patents is the "Method of manufacturing a mask support of SiC for radiation lithography." This invention details a process in which a silicon carbide (SiC) layer is deposited on a silicon single crystal wafer. The method utilizes selective etching to remove the bulk of the wafer, creating a mask support that undergoes an annealing process in an oxidizing atmosphere at controlled temperatures.

Another recent patent is titled "Method of manufacturing a mask for radiation lithography." This innovation describes a technique for creating a mask that features a mask support and a substrate with an absorber layer. The absorber, consisting of partially oxidized tungsten, is structured to meet specific design requirements, demonstrating Margret's expertise in precision engineering.

Career Highlights

Margret Harms is currently employed at U.S. Philips Corporation, a prominent player in the technology and innovation sector. Her work at this reputable institution has allowed her to harness cutting-edge technology and collaborate with distinguished professionals in her field.

Collaborations

Throughout her career, Margret has engaged in collaborative efforts with talented colleagues, including Holger K. Luthje and Angelika M. Bruns. These partnerships have fostered an environment where innovative ideas can flourish, allowing for the creation of advanced technologies in lithography.

Conclusion

With her impressive track record and commitment to innovation, Margret Harms stands as a noteworthy inventor in the realm of radiation lithography. Her contributions through her patents not only reflect her ingenuity but also highlight her significant role in advancing technological capabilities within her field. Margret's ongoing research and collaboration with esteemed peers promise a bright future for further innovations in this critical area of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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