The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 1990
Filed:
Sep. 29, 1988
Applicant:
Inventors:
Angelika M Bruns, Henstedt-Ulzburg, DE;
Margret Harms, Hamburg, DE;
Holger K Luthje, Halstenbek, DE;
Bernd Matthiessen, Seevetal, DE;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C / ;
U.S. Cl.
CPC ...
156657 ; 156662 ; 156644 ; 430-5 ; 430 65 ; 430329 ; 427249 ; 427255 ; 4272552 ;
Abstract
A method of manufacturing a mask support or diaphragm of SiC for X-ray lithography masks is set forth in which a SiC layer is deposited by means of chemical vapor deposition (CVD) on a substrate in the form of a monocrystalline silicon wafer on at least one of the two major surfaces of the monocrystalline silicon wafer, after which the monocrystalline silicon wafer is removed except an edge region in a selective etching step. According to the invention the following processing steps are used: