The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1991
Filed:
Dec. 04, 1989
Applicant:
Inventors:
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C23F / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156633 ; 156647 ; 156652 ; 156657 ; 1566591 ; 156662 ;
Abstract
The invention relates to a method of manufacturing a mask support (diaphragm) of SiC for radiation lithography masks, in which an SiC layer is deposited at least on one of the two major surfaces of a substrate in the form of a silicon single crystal wafer and the silicon single crystal wafer is removed except at an edge region by means of a selective etching step, the mask support being annealed before or after the selective etching step in an oxidizing atmosphere at a temperature in the range of 200.degree. to 1350.degree. C. for a duration of 2 to 10 h.