The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 1985

Filed:

Aug. 31, 1983
Applicant:
Inventors:

Margret Harms, Hamburg, DE;

Angelika Bruns, Henstedt-Ulzbur, DE;

Holger Luthje, Halstenbek, DE;

Bernd Matthiessen, Seevetal, DE;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B / ; G02B / ; G03F / ;
U.S. Cl.
CPC ...
430-5 ; 350318 ; 378 35 ; 430967 ;
Abstract

In a mask for X-ray lithography, in which a pattern of a layer corresponding to the structure to be manufactured and consisting of a material opaque to visible light is applied to a thin diaphragm of a material transparent to X-ray radiation, an adjustment with visible radiation, such as laser light, is made possible using a diaphragm consisting of a material opaque to visible light and using adjustment windows of a material transparent to the visible light of the spectrum through the diaphragm.


Find Patent Forward Citations

Harms, Margret. (1985). Mask for the formation of patterns in lacquer layers by means of x-ray (U.S. Patent No. 4555460). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4555460

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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