The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 1984
Filed:
Apr. 29, 1982
Applicant:
Inventors:
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
378 35 ; 430-5 ;
Abstract
The manufacture of semiconductor systems by means of radiation lithography requires low-stress masks when it is important to achieve very fine structures. In accordance with the invention, such a mask comprises a carrier of boron-doped silicon, a radiation absorbing pattern consisting of a double layer of different metals, such as molybdenum and tungsten, or a double layer of layers of the same metal, such as molybdenum, which are deposited in a different manner.
Harms, Margret. (1984). Radiation lithography mask and method of manufacturing same (U.S. Patent No. 4468799). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4468799
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