Company Filing History:

9 out of 29,232

Texas Instruments Corporation

patents

1 out of 187

University of North Texas

patents

1 out of 5,444

University of Texas System

patents

Years Active: 2004-2022

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11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11296140 - Method for the integration of monolithic thin film radiation detector systems (2022-04-05),

2. 8816446 - Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal (2014-08-26),

3. 8058122 - Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal (2011-11-15),

4. 7943479 - Integration of high-k metal gate stack into direct silicon bonding (DSB) hybrid orientation technology (HOT) pMOS process flow (2011-05-17),

5. 7799632 - Method of forming an isolation structure by performing multiple high-density plasma depositions (2010-09-21),

6. 7625807 - Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication (2009-12-01),

7. 7199021 - Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication (2007-04-03),

8. 7115530 - Top surface roughness reduction of high-k dielectric materials using plasma based processes (2006-10-03),

9. 7045436 - Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI) (2006-05-16),

10. 6933235 - Method for removing contaminants on a substrate (2005-08-23),

11. 6809370 - High-k gate dielectric with uniform nitrogen profile and methods for making the same (2004-10-26),

Title: The Innovative Contributions of Manuel A Quevedo-Lopez

Introduction

Manuel A Quevedo-Lopez is a prominent inventor based in Denton, TX (US). He has made significant contributions to the field of semiconductor devices and radiation detection technologies. With a total of 11 patents, his work has had a substantial impact on various technological advancements.

Latest Patents

One of his latest patents is a method for the integration of monolithic thin film radiation detector systems. This innovative thin film radiation detection device includes a photosensitive p-n diode, a polysilicon thin film transistor (TFT), a radiation detection layer, and a substrate. The photosensitive p-n diode and the TFT are formed on the substrate, while the radiation detection layer is positioned above the substrate to receive multiple radiations. The photosensitive p-n diode generates a detector signal based on the conversion output from the radiation detection layer, and the TFT amplifies this signal. Another notable patent involves the formation of a metal gate electrode using a rare earth alloy incorporated into mid-gap metal. This patent provides semiconductor devices and fabrication methods that enhance the performance of MOS transistors by adjusting the gate electrode work function, thereby tuning the threshold voltage of the resulting NMOS transistors.

Career Highlights

Throughout his career, Manuel has worked with notable organizations such as Texas Instruments Corporation and the University of North Texas. His experience in these institutions has allowed him to develop and refine his innovative ideas, contributing to the advancement of technology in his field.

Collaborations

Manuel has collaborated with esteemed colleagues, including James Joseph Chambers and Luigi Colombo. These partnerships have fostered a creative environment that has led to groundbreaking inventions and advancements in technology.

Conclusion

Manuel A Quevedo-Lopez's contributions to the field of semiconductor devices and radiation detection are noteworthy. His innovative patents and collaborations highlight his commitment to advancing technology. His work continues to inspire future inventors and researchers in the field.

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