The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Jul. 27, 2004
Amitava Chatterjee, Plano, TX (US);
Alwin Tsao, Garland, TX (US);
Manuel Quevedo-lopez, Plano, TX (US);
Jong Yoon, Plano, TX (US);
Shaoping Tang, Plano, TX (US);
Amitava Chatterjee, Plano, TX (US);
Alwin Tsao, Garland, TX (US);
Manuel Quevedo-Lopez, Plano, TX (US);
Jong Yoon, Plano, TX (US);
Shaoping Tang, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method () of forming an isolation structure is disclosed, and includes forming an isolation trench in a semiconductor body () associated with an isolation region, and filling a bottom portion of the isolation trench with an implant masking material (). An angled ion implant is performed into the isolation trench () after having the bottom portion thereof filled with the implant masking material, thereby forming a threshold voltage compensation region in the semiconductor body. Subsequently, the isolation trench is filled with a dielectric material ().